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CGD and NXP collaborate to accelerate time to market

35 d ago

On 15 June 2026, fabless firm Cambridge GaN Devices Ltd (CGD) — spun out from the University of Cambridge in 2016 — announced a long-term collaboration with NXP Semiconductors to accelerate time to market in data-center and automotive markets. These high-growth sectors present a major opportunity for gallium nitride (GaN) technology. The International Energy Agency expects data-center energy use to double by 2030, and the data-center power semiconductor market is forecast to grow at a CAGR of 11% to US$4.29bn by 2032. Meanwhile, the electric vehicle traction inverter market is projected to reach US$67.6bn by 2034 (CAGR 16.1%). Under the collaboration, NXP will develop GaN-based system solutions using CGD’s GaN products, early access to next-generation CGD GaN developments, and CGD’s expertise in GaN processes and technologies. In return, CGD gains access to NXP’s broad processor and analog product portfolios, system know-how, and global commercial reach, accelerating market penetration through optimized system-level solutions. “By working closely with NXP, we are accelerating the shift towards a new class of GaN-based power electronics,” said CGD CEO Fabio Necco. “This collaboration leverages GaN performance to increase efficiency, power density and reliability in real-world data-center and automotive systems.” NXP vice president Chris Bretz added, “CGD combines advanced GaN innovation with practical, scalable power solutions. They are an ideal long-term collaborator for NXP to accelerate high-efficiency GaN adoption across high-growth markets.” GaN enables higher switching frequencies and greater efficiency than competing technologies. In data centers, rising AI workloads have pushed per-rack power from 40kW in 2022 to over 200kW today, with expectations of 1MW+ by 2030. CGD claims its ICeGaN technology uniquely addresses these needs, offering higher switching frequency, higher power density, and superior reliability over discrete GaN solutions. For automotive traction inverters, GaN improves low-load efficiency, and CGD’s ICeGaN is the only single-chip GaN technology running on a standard driver that enables device paralleling to meet high current demands. The complementary IP and skills of both companies are expected to deliver differentiated system-level solutions for customers exploring GaN in these two critical markets.