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Why 800 VDC Power Distribution is Gaining Traction in AI Data Centers

35 d ago

This week’s roundup from Power Electronics News covers key developments in silicon carbide (SiC), 800 VDC architecture, and TSMC’s technology roadmap. **News Highlights:** - JEDEC has released new guidelines establishing common methodologies for SiC reliability assessment and short-circuit evaluation. - Fifth-generation SiC MOSFETs target improved efficiency and durability in electric vehicle (EV) powertrains. - New film capacitors reduce parasitic losses and support high-frequency SiC power conversion applications. - Elite Pairing Studio enables early evaluation of SiC MOSFET and gate driver combinations in the design cycle. **Articles Highlights:** - 800 VDC promises 157% more power through the same copper cross-section, but standards, connectors, and solid-state transformers (SSTs) must catch up. - TSMC’s 2026 Europe Technology Symposium outlined a path to one trillion transistors per package by 2030, combining A12, CoWoS scaling to 48x, SoIC, and co-packaged optics into a single AI platform. - Part 2 of an article examines IMS-based repackaging of discrete SiC devices as a cost-effective alternative to commercial power modules. - Episode 12 of the QSPICE course covers TVS diodes and MOV varistors for overvoltage protection in power circuits. The article also notes that power electronics is increasingly vital in automotive, industrial, and consumer markets, enabling enhanced performance, safety, and functionality. Key focus areas include power converters, motion control, semiconductors, and thermal management, with challenging electric and thermal demands shaping system design. The Power Electronics News eBook provides an interactive update on the latest technologies, trends, and product innovations in these specific markets.